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Tsinghua University: Two-Dimensional Semiconductor Material—Black Phosphorus | Nature Physics
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Two-dimensional semiconductor material: black phosphorus (BP) exhibits band structure that can be modulated via the Stark effect under an applied perpendicular electric field. However, its circuit‑level applications remain unclear. Recently, Associate Professor Tian He, along with Professors Wang Ziming and Ren Tianling from Tsinghua University, in collaboration with Professor Guo Hao from North University of China, published a paper in Nature Physics demonstrating both digital and analog circuit implementations based on the Stark effect in black phosphorus. By tuning the band structure, the researchers were able to control the current‑on/off ratio and the intrinsic carrier concentration, enabling precise regulation of amplifier gain and bandwidth, as well as the realization of binary and ternary logic gates. Leveraging this effect, they designed a BP‑based amplifier with a current‑source load, which exhibits a steep gain‑control slope and a bandwidth‑tuning range exceeding one order of magnitude. Furthermore, the study demonstrated a stacked array of BP transistors for binary convolutional neural networks, delivering superior performance compared to silicon‑based and memristor‑based circuits, thereby highlighting its potential for next‑generation electronic systems.
Reconfigurable and multifunctional circuits using the Stark effect in black phosphorus. Reconfigurable and multifunctional circuits based on the Stark effect in black phosphorus.
Figure 1 | The fundamental principle of Stark-effect modulation and its application in electronic circuits.
Figure 2 | Characterization of the double-gate BP transistor and electrostatic tuning of the bandgap.
Figure 3 | Static electrical characteristics of the BP amplifier modulated by the Stark effect.
Figure 4 | Dynamic performance of the BP amplifier and frequency doubler modulated by the Stark effect.
Figure 5 | BP binary and ternary logic gates modulated via the Stark effect.
Figure 6 | Stacked Stark-effect-modulated BP transistor array for BCNN
Source: Today’s New Materials
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