Chongfan Technology
News
09
2024
-
05
New Optical "Silicon" and Chip Technology for Batch Manufacturing
Author:
On May 8, the team of Ou Xin, a researcher at the Shanghai Institute of Microsystems and Information Technology of the Chinese Academy of Sciences, made a breakthrough in the preparation of lithium tantalate heterogeneous integrated wafers and high-performance photonic chips. Related research results to the "mass production of lithium tantalate integrated photonic chip" (Lithium tantalate photonic integrated circuits for volume manufacturing) as the title, published in the "nature" (Nature).
With the development of the global integrated circuit industry entering the "post-Moore era", the difficulty and cost of improving the performance of integrated circuit chips are getting higher and higher, and people are urgently looking for new technical solutions. The integrated optoelectronic technology represented by silicon optical technology and thin-film lithium niobate photonic technology can deal with this problem. Among them, lithium niobate is known as "optical silicon" and has attracted much attention in recent years.
Similar to lithium niobate, Ou Xin's team and collaborators have demonstrated that single-crystal lithium tantalate films also have excellent electro-optical conversion properties and have advantages over lithium niobate in terms of birefringence, transparent window range, photorefractive resistance, and frequency comb generation. In addition, the preparation process of the silicon-based lithium tantalate heterogeneous wafer is closer to the silicon on the insulator, so the lithium tantalate film can be manufactured at low cost and on a large scale, and has application value.
Ou Xin's team used heterogeneous integration technology based on "universal ion knife" to prepare high-quality silicon-based lithium tantalate single crystal thin film heterogeneous wafers by hydrogen ion implantation combined with wafer bonding. Further, the collaborative team developed an ultra-low-loss lithium tantalate photonic device micro-nano processing method that reduced the optical loss of the corresponding device to m-1 5.6 dB, which is lower than the lowest loss value reported by other teams for wafer-level lithium niobate waveguides. In this study, combined with the wafer-level flow sheet process, the effective suppression of low birefringence in lithium tantalate materials for mode crossover is discussed, and the lithium tantalate photonic microcavity resonator that can be applied to the entire communication band is verified. Lithium tantalum acid photonic chip shows the electro-optical modulation efficiency equivalent to lithium niobate film, and based on lithium tantalum acid photonic chip, the study for the first time in the X-cut electro-optical platform to produce a soliton optical frequency comb, combined with electro-optical tunable properties, is expected to be applied in laser radar and precision measurement. At present, the research has tackled 8-inch wafer preparation technology, which has laid a material foundation for the development of larger-scale domestic optoelectronic integrated chips and mobile terminal RF filter chips.
Ou Xin introduced: "Compared to thin film lithium niobate, thin film lithium tantalate is easier to prepare and more efficient to prepare. At the same time, lithium tantalate film has a wider transparent window, strong electro-optical modulation, weak birefringence, and stronger anti-photorefractive properties, this innate material advantage expands the optical design freedom of the lithium tantalate platform."
Preparation of Lithium Tantalate Heterogeneous Integrated Wafer and Schematic Diagram of High Performance Photonic Chip
(a) Silicon-based lithium tantalate heterogeneous wafer (B) Thin film lithium tantalate optical waveguide preparation process and waveguide scanning lens microscope
(a) Lithium tantalate curved waveguide, (B) lithium niobate curved waveguide dispersion curve design (solid line) and the actual dispersion curve (scatter), can be observed in the lithium niobate waveguide dispersion curve obvious mode cross effect
(a) Thin-film lithium tantalate electro-optic modulator; (B) First realization of a Kerr soliton optical frequency comb on X-cut lithium tantalate
Preparation of 8-inch Silicon-based Thin Film Lithium Tantalate Wafer
The first completion of the above results for the Shanghai micro system. The work was completed by the Shanghai Institute of Microsystems and the Swiss Federal Institute of Technology Lausanne.
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