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Technical Data
The near-infrared CMOS camera uses near-infrared extended silicon material image sensors, with a response range extended to 1200nm, and the noise is much lower than that of InGaAs chips, making it very suitable for light detection of silicon-based chips, solar cells, etc.
Near-infrared CMOS camera parameters:
Main features
• 13 million pixels high resolution
• Wavelength coverage up to 1200nm;
• Low cost, high cost performance: compared to InGaAs cameras
• Suitable for night vision
• USB2.0 interface
Near-infrared CMOS cameraMain applications:
• Microscopic near-infrared imaging
• Laser spot NIR detection
• Semiconductor detection
• Electroluminescence detection of solar panels


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