Chongfan Technology
News
25
2025
-
02
Self-powered detector based on MoSe₂/NbOI₂ heterojunction, achieving polarization detection from visible light to near-infrared light.
Author:
Two-dimensional (2D) ferroelectric materials can generate bulk photovoltaic effect (BPVE), which makes them highly promising in the field of self-powered photodetectors. However, due to weak transition intensity and wide bandgap, the optical response of two-dimensional ferroelectric materials is relatively weak, limiting their practical applications. Previous research on bulk photovoltaic effect has mostly focused on ferroelectric oxides, and although some recent studies on two-dimensional material systems have also demonstrated bulk photovoltaic effect, they mostly focus on the out-of-plane (OOP) direction, with less reporting in the in-plane (IP) direction due to weak optical response. The transition metal oxide NbOI₂ is a new type of two-dimensional ferroelectric semiconductor, which has advantages such as in-plane ferroelectric polarization and excellent piezoelectric performance, but its low optical response limits its application in optoelectronic devices.
According to a report by Mems Consulting, a research team from South China Normal University recently constructed a van der Waals heterojunction using NbOI₂ with significant in-plane polarization and high-absorption MoSe₂ layers. This research promotes the understanding of the self-powered mechanism through bulk photovoltaic effect and proposes new strategies for future self-powered devices. This research was published under the title "In-Plane Bulk Photovoltaic Effect in a MoSe2/NbOI2 Heterojunction for Efficient Polarization-Sensitive Self-Powered Photodetection" inNano Lettersjournal.
NbOI₂ has a typical van der Waals layered structure (as shown in Figure 1a). The MoSe₂/NbOI₂ photodetector was prepared through mechanical exfoliation and dry transfer, with the device structure shown in Figure 1d. The MoSe₂/NbOI₂ forms a type-II heterojunction, with its band structure shown in Figure 1e.
The researchers used ultrafast spectroscopy to study the charge energy transfer dynamics of the MoSe₂/NbOI₂ heterojunction, with relevant results shown in Figure 2. Figure 3a shows the variation of dark current over time for the MoSe₂/NbOI₂ heterojunction device under DC polarization conditions, and the working principle of the self-powered device is illustrated in Figure 3d.
The researchers also characterized the typical features of the MoSe₂/NbOI₂ heterojunction device to evaluate the performance of the self-powered detector, with relevant results shown in Figure 4.
In summary, this research successfully constructed a van der Waals heterojunction based on two semiconductor layer materials, NbOI₂ and MoSe₂. The MoSe₂/NbOI₂ heterojunction undergoes ultrafast charge transfer within a few picoseconds, thereby promoting efficient charge dissociation and extraction. Notably, NbOI₂ exhibits a strong in-plane ferroelectric photovoltaic effect, enabling the realization of self-powered photodetectors. DC polarization significantly enhances the internal field and built-in field, achieving high responsiveness across a wide wavelength range from visible light to near-infrared, with a responsivity of 101.3 mA/W, surpassing most bulk photovoltaic effect devices. The switchability of the internal electric field and built-in electric field enables bipolar optical response and excellent self-powered photodetection polarization sensitivity. This research highlights the tremendous potential of self-powered photodetectors utilizing in-plane ferroelectric photovoltaic effect.
LATEST NEWS
Thank you for visiting the official website of Chongfan Technology. If you have cooperation intentions or suggestions, please contact us through the following methods, and we will reply as soon as possible, thank you!
Address: Room 403, Building 6, Phase III of R&D, No. 36 Xiyong Avenue, High tech Zone, Chongqing, China.
Telephone: +86-13658337211
E-mail: Sales@cfkeji.net
Website: www.cfkeji.net
Mobile Version
