Chongfan Technology
News
21
2025
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02
Ultra-sensitive short-wave infrared single-photon detection based on all-silicon single-electron transistors
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Short-wave infrared (SWIR, wavelength range: 1000-3000 nm) single-photon detection technology is crucial for applications such as spectroscopy, quantum information processing, biomedical imaging, communication, and sensing. Ultra-sensitive short-wave infrared photon detection is an important direction in quantum technology research. However, due to the low absorption coefficient of silicon materials in the short-wave infrared band, developing CMOS-compatible silicon-based short-wave infrared detectors has faced challenges.
According to a report by Mems Consulting, a research team composed of Shizuoka University in Japan and the Indian Institute of Technology Roorkee has recently fabricated a co-doped silicon-based single-electron transistor (SET) in an insulated silicon (SOI) field-effect transistor (FET) architecture, successfully achieving ultra-high sensitivity short-wave infrared single-photon detection. Compared to dark conditions, the shift in the peak current starting point of the SET under illumination and the appearance of random telegraph signals (RTS) validate the detection mechanism of the device. Based on noise equivalent power (NEP) calculations, the sensitivity of the device is 10⁻¹⁹ W/√Hz. This research result was published under the title "Ultra-Sensitive Short-wave Infrared Single-Photon detection using a Silicon Single-electron Transistor" inAdvanced Electronic Materialsjournal.
The short-wave infrared single-photon detection technology employs a co-doped SOI-FET fabricated using CMOS-compatible electron beam lithography, featuring nanoscale channel sizes. Figure 1a shows a schematic diagram of the co-doped SOI-FET device structure, Figure 1b presents a scanning electron microscope (SEM) image of the device, and Figure 1c illustrates the random distribution of phosphorus (P) donors and boron (B) acceptors in the channel region of the device.
Subsequently, the researchers conducted an in-depth study of the photoelectric characteristics and stability of the co-doped SOI-FET device, with relevant results shown in Figure 2. Figure 2b displays the stability map of the device in the VBG-VD plane. The Arrhenius plot can be used to study the effect of temperature on the device's current-voltage characteristics. Figure 2c shows the relationship between the barrier height calculated from the Arrhenius plot and the back gate voltage (VBG). Based on the device's transfer characteristics (as shown in Figures 2a to 2c) and the estimated position of the P donors, Figure 2d presents the potential distribution model in the channel region.
To explore the light-induced effects of the device, the researchers measured the stability of the device under illumination (as shown in Figure 3a). The shift in the peak SET current may be due to changes in the Fermi levels of the source and drain. Under short-wave infrared illumination, the increase in doping activation in the extended source and drain regions may cause its Fermi level to be higher than that of the channel region (as shown in Figure 3b).
In addition, the researchers also measured the stability map of the device under different photon energies. Figures 4a and 4b show the stability of the device under illumination at wavelengths of 1154 nm (corresponding to the energy required for carrier excitation between the valence band and the donor band near the conduction band edge) and 750 nm (where the photon energy exceeds the silicon bandgap).
In summary, this research demonstrates a high-sensitivity all-silicon single-photon detector operating in the short-wave infrared band, utilizing a co-doped SOI-FET as a single-electron transistor. The photon detection mechanism of the device in the short-wave infrared band mainly relies on the analysis of random telegraph signals and the shift of the SET current peak under short-wave infrared illumination compared to dark conditions. Additionally, the high doping concentration in the device effectively enhances photon absorption capability, thereby extending the silicon-based detection capability to the sub-bandgap short-wave infrared band. Notably, the device also shows potential for single-photon detection in the near-infrared (NIR) and visible light bands. Based on noise equivalent power (NEP) calculations, the sensitivity of the device is 10⁻¹⁹ W/√Hz, representing a significant breakthrough compared to existing technologies. This ultra-high sensitivity achieved through the SET detection mechanism makes the device an ideal candidate for future long-wavelength photon detection applications at higher temperatures.
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