Chongfan Technology

News

All Categories >

Home page

2024

Metal Institute/Peking University Jointly, Latest Nature!

Author:

Hot carrier transistors are a class of devices that utilize excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to a high-energy state, increasing the speed and functionality of the device. These characteristics are critical for applications that require fast switching and high-frequency operation, such as advanced telecommunications and cutting-edge computing technology.However, the traditional hot carrier generation mechanism is either carrier injection or acceleration, which limits the device performance in terms of power consumption and negative differential resistance.

On August 14, 2024, Sun Dongming, Liu Chi and Zhang Lining of Peking University, Institute of Metal Research, Chinese Academy of Sciences, jointly communicated inNaturePublished online entitled"A hot-emitter transistor based on stimulated emission of heated carriers"The research paper, which reports a hot emitter transistor based on a dual mixed-dimensional graphene/germanium Schottky junction, which uses the stimulated emission of heated carriers to achieve a sub-threshold swing below 1 mV per decade outside the Boltzmann limit, and achieves a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with high inversion gain and reconfigurable logic states is further demonstrated.This work reports a multifunctional thermal emitter transistor with great potential for low power consumption and negative differential resistance applications, marking a promising advancement in the post-Moore era.

According to Ng and Sze, transistors can be divided into three groups: field effect transistors, potential effect transistors, and hot carrier transistors. The first two types of transistors are represented by metal oxide semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs), which have achieved great success in modern integrated circuits; the third type of transistors mainly include hot electron transistors (HETs) and real space transfer transistors (RSTTs), which are based on the excess kinetic energy of hot carriers and have advantages in speed and versatility.

HETs use a metal or semiconductor as the base. When electrons are injected from the emitter into the base, they become hot and fast because their energy is higher than that in the base, resulting in a short base transit time and a high-speed device. Two-dimensional materials such as graphene and molybdenum disulfide (MoS2) are used as substrates due to their low atomic thickness, further shortening the substrate transit time and providing potential terahertz operation, which is very promising in future 6G technologies.In contrast, RSTT uses an electric field to accelerate carriers, and when they become hot enough, the carriers will transfer from one route to another, resulting in high-speed operation and negative differential resistance (NDR), which is used in high-frequency oscillators. Various fields are very much needed.

Device structure and basic characteristics

HETs and RSTT offer potential high performance. However, the mechanism of hot carrier generation is either carrier injection or acceleration, which may limit the performance and function of the device. Neither of these devices can provide ultra-low subthreshold swings that exceed the Boltzmann limit by less than 60 mV dec − 1, which is very desirable for modern low-power applications. In addition, for RSTT, NDR is limited when devices are fabricated using silicon (Si) and germanium (Ge) technologies, which are compatible with mainstream semiconductor production. In order to improve the power consumption and NDR of the hot carrier device, a new hot carrier generation mechanism is needed.

In this study, the researchers used the SEHC mechanism based on mixed dimensional materials. HOET provides another member of the hot carrier transistor family, which produces ultra-low SS, which is one of the lowest values reported, and the PVR in NDR effect is one of the highest in Gr devices.By combining the right materials and device structure, HOET can provide multifunctional and high-performance devices with post-Moore low power consumption and NDRpotential applications of the technology.

Chongqing Chongfan Technology Co., Ltd. Optical platform film thickness meter OCT optical coherence tomography LabVIEW control

Nanjing University's latest Nature!

Zhang Tongmei Team of Capital Medical University Latest Mol Cancer

Nanjing University's latest Nature!

Zhang Tongmei Team of Capital Medical University Latest Mol Cancer